The SANYO HIT® (Heterojunction with Intrinsic Thin layer) solar cell is made of a thin mono crystalline silicon wafer surrounded by ultra-thin amorphous silicon layers. This product provides the industry‘s leading performance and value using state - of-the -art manufacturing techniques.
Nominal Power Pmpp: 240 [W]
Max. power tolerance: + 10 / - 5 [%]
Max. system voltage: 1000 [V]
Maximum voltage: 35.5 [V]
Maximum power current: 6.77 [A]
Open circuit voltage: 43.6 [V]
Short circuit current: 7.37 [A]
Temperature coefficident - open circuit voltage: -109 [mV / °C]
Temperature coefficident - short circuit current: 2.21 [mA / °C]
Temperature coefficident of Pmpp: -0.3 [% / °C]
Cell efficiency: 20 [%]
Module efficiency: 17.3 [%]
Certificates: IEC 61730, IEC 61215
Length: 1610 [mm]
Width: 861 [mm]
Height: 35 [mm]
Height, incl. junction box: 35 [mm]
Weight: 16.5 [kg]
Connection type: MC4
Cells
Number of Cells per module: n/a
Cell technology: HIT (Heterojunction with Intrinsic Thin layer)
Cell form: n/a
Cell dimensions: n/a
Cell contacting: n/a
